www.galaxycn.com bl galaxy electrical bl document number 0290001 general description i t(rms) v drm i drm v tm i tsm r s dv/dt di/dt (7) (8) (5) (9) max min min max max max ma x 60hz 50hz min min typ k1050g 1 90 95 113 5 150 1.5 20 16.7 0.1 1500 150 k1100g 1 90 104 118 5 150 1.5 20 16.7 0.1 1500 150 k1200g 1 90 110 125 5 150 1.5 20 16.7 0.1 1500 150 k1300g 1 90 120 138 5 150 1.5 20 16.7 0.1 1500 150 k1400g 1 90 130 146 5 150 1.5 20 16.7 0.1 1500 150 k1500g 1 90 140 170 5 150 1.5 20 16.7 0.1 1500 150 k2000g 1 180 190 215 5 150 1.5 20 16.7 0.1 1500 150 k2200g 1 180 205 230 5 150 1.5 20 16.7 0.1 1500 150 K2400G 1 190 220 250 5 150 1.5 20 16.7 0.1 1500 150 k2500g 1 200 240 280 5 150 1.5 20 16.7 0.1 1500 150 k2501g 1(10) 200 240 280 5 150 6 20 16.7 0.1 1500 150 60 ty pe 60 sidac v bo : 95 - 280 volts 60 available for custom design applications. please 75 60 galaxy electrical holding current of the device. ? switching voltages in the range of 95 v to 330 v. ? sidacs feature glass-passivated junctions that ensure do - 15 kg --- series 60 i bo ma typ 60 a 10 max 10 10 a v v a k |? v/sec a/sec ? a sidac is a silicon bilateral voltage triggered switch, with greater power-handling capabilities than standard diacs. upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on, through a negative resistance region, to a a low on-state voltage. conduction will continue until the current is interrupted or drops below the minimum consult the factory for more information. i h (3) (4) long term reliability and stable characteristics by creating a rugged, reliable barrier against junction contamination. ? variations of devices covered in this data sheet are v bo (1) 10 10 60 60 60 60 60 10 10 10 10 va 10 1. dimensions in millimeters
+i -v +v i t i h i s i bo i drm v t v drm v s v bo r s (v bo -v s ) ( i s -i bo ) r s supply frequency: 60 hz sinusoidal load: resistive rms on-state current: i t r ms maximum rated value at specified junction temperature blocking capability may be lost during and immediately following surge current interval overload may not be repeated until junction temperature has returned to steady-state rated value. 1.0 10 1000 100 1.0 2.0 40 100 4.0 10 8.0 6.0 20 surge current duration - full cycles peak surge (nonrepetitive) on-state current [i tsm ] - amps www.galaxycn.com bl galaxy electrical document number 0290001 2. (9) for best sidac operation, the load impedance should be near or less than sw itching resistance. r s ? sw itching resistance r s = 50/60 hz sine w ave (v bo -v s ) ? all measurements are made at 60hz w ith a resistive load at an of this catalog. ? junction temperature range (t j ) is -40c to +125c. ? lead solder temperature is a maximum of +230c f or 10 seconds ambient temperature of +25c unless otherw ise specif ied. v drm ? repetitive peak of f -state voltage (i s -i bo ) v bo ? breakover voltage 50/60 hz sine w ave max i mum; ?y 1/16" (1.59mm) from case. ? storage temperature range (t s ) is -65c to +150c. ? the case (t c ) or lead (t l ) temperature is measured as show n on the dimensional outline draw ings. see ?package dimensions? section v tm ? peak on-state voltage, i t = 1 amp general notes i drm ? repetitive peak of f -state current 50/60 hz sine w ave; v = v drm (5) see figure 9.1 for more than one full cycle rating. i h ? dynamic holding current 50/60 hz sine w ave; r = 100 |? (6) r ratings and characteristic curves kg --- series v-i characteristics fig.1-- peak surge current vs surge current ffffffff duration
140 120 80 100 20 40 60 26 0 0.2 0.4 0.6 0.8 1.0 d o - 1 5 x current waveform: sinusoidal - 60 hz load: resistive or inductive free air rating rms on-state current [i t(rms) ] - amps maximum allowable ambient temperature (t a ) - c 0 .5 1.5 1.0 2.0 -40 -15 +25 +65 +105 +125 case temperature (t c ) - c i h (t c =25 c) i h ratio of www.galaxycn.com bl galaxy electrical document number 0290001 3. ratings and characteristic curves kg --- series fig.2 -- normalized dc holding current vs fffffffffff case/lead temperature fig.3-- repetitive peak on-state current (i trm ) gggg vs pulse width at various frequencies fig.4 -- maximum allowable ambient ffffffffff ff temperature vs on-state current fig.5 -- normalized v bo change vs junction jjjjjjjjjjj temperature fig.6 -- normalized repetitive peak breakover current vs junction temperature fig.7 -- on-state current vs on-state voltage ggggggg (typical) 0.6 0.8 1 2 4 6 8 10 20 40 60 80 100 200 400 600 468 2 1 6 482 6 48 2 x 10-3 1 x 10-2 1 x 10-1 f = 2 0 k h z f = 1 0 k h z f = 5 k h z f = 1 k h z f = 1 0 0 k h z f = 1 0 k h z r e pe t i ti o n f r e q u e nc y f =5 h z n o n - r e p e a t e d to l/f current v bo firing i trm waveform di/dt limit line t j =125o c max pulse base width (t o ) - msec. repetitive peak on-state current (i trm ) - amps 0 -2 -6 -4 -12 -10 -8 -40 -20 0 +20 +40 +60 +2 +4 +80 +120 +100 +140 +25 percentage of v bo change - % junction temperature (t j ) - c 7 6 4 5 1 2 3 20 40 50 60 80 90 8 9 100 120 110 130 70 30 repetitive peak breakover current (i bo ) multiplier junction temperature (t j ) - c v=v bo 7 6 4 5 1 2 3 0 1.0 2.0 2.2 2.6 2.8 8 9 3.0 3.4 3.2 3.6 2.4 0.8 positive or negative instantaneous on-state current (i t ) - amps positive or negative instantaneous on-state voltage (v t ) - volts 0 1.2 1.6 1.4 1.8 t l =25 c kxx01g
s1 push to test trace stops 100 |? 1% switch to test in each direction device under test scope s1 100-250 vac 60 hz i pk i h scope indications 100 |? 2w 10 | f - 250v + + - 10 | f 450v 120vac 60hz xenon lamp k2200g 4kv sidac 200- 400v trigger transformer 20:1 20m |? .01 | f 400v 24 vac 60 hz 50v - + 10 | f 4.7 | f 100v 4.7 k |? 1/2w 200v k1200e sidac h.v. ignitor + - + - 4.7 | f 100v 1.2 | f 100-250 vac 60 hz 100-250 vac 60 hz sidac scr www.galaxycn.com bl galaxy electrical document number 0290001 4. fig.13 -- dynamic holding current test circuit for sidacs ratings and characteristic curves kg --- series fig.8 -- power dissipation (typical) vs on-state mmmmmmmm current fig.9 -- comparison of sidac vs scr fig.10 -- lgnitor circuit (low voltage input) fig.11 -- typical high pressure sodium lamp firing circuit fig.12 -- xenon lamp flashing circuit 1.8 1.6 1.2 1.4 0.6 0.8 1.0 01.0 2.0 2.2 0.8 average on-state power dissipation [p d(av) ] - watts rms on-state current [i t(rms) ] - amps 0.4 0.2 0.6 0.4 0.2 current waveform: sinusoidal load: resistive or inductive conduction angle: see figure 9.15 kxx01g 120 vac 60 hz ballast 0.47 | f 400v sidac 3.3 k |? lamp 16 mh 120 vac 220 vac 60 hz 220 vac sidac 0.22 | f 7.5 k |? lamp ballast
input 50 |? 50 |? v bb1 =10v v bb2 =0 2n6127 (or equivalent) (see note b) r bb2 =100 |? v ce monitor tip-47 v cc =20v r s =0.1 |? i c monitor 100mh + - + - sidac v bo 0 0.63 a 5 v 0 v input voltage collector current 10 v v ce(sat) ?? tw ?? 3 ms (see note a) t w 100 ms collector current r bb1 =150 |? voltage and current waveforms test circuit note a: input pulse width is increased until i cm = 0.63a. note b: sidac (or diac or series of diacs) chosen so that v bo is just below v ceo rating of transistor to be protected. the sidac (or diac) eliminates a reverse breakdown of the tr ansistor in inductive switching circuits where otherwise the transistor could be destroyed. dc(in) v ?y v bo (a) circuit r vc c i l sidac r l (b) waveforms v bo v c i l t t v in -v tm r min ?y i h(min) v in -v bo r max ? i bo 100-250 vac 60hz i h v bo load v bo v bo 120-145 ?? conduction angle load current i h i h www.galaxycn.com bl galaxy electrical document number 0290001 5. fig.16 -- sidac added to protect transistor for typical transistor inductive vvvvvvvvvvvvvvvvv load switching requirements ratings and characteristic curves kg --- series fi g.14 -- basi c sidac circuit fig.15 -- relaxation oscillator using a sidac
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